Jamie D. Phillips received the B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Michigan, Ann Arbor, Michigan, in 1994, 1996, and 1998, respectively. In his doctoral studies, he made key contributions to the epitaxial growth and device applications of self-assembled InGaAs/GaAs quantum dots, including quantum dot infrared photodetectors and lasers. He was a Postdoctoral Researcher at Sandia National Laboratories from 1998-1999, a research scientist at the Rockwell Science Center from 1999-2001, and joined the faculty in the Electrical Engineering and Computer Science Department at the University of Michigan in 2002 where he is currently an Associate Professor. His technical interests and contributions are in the growth, characterization, and device applications of compound semiconductor and oxide-based materials for optoelectronics and electronics where he has published more than 90 peer-reviewed articles on these subjects with an h-index > 20. His current research efforts are in the areas of intermediate band solar cells, ZnO materials and devices, HgCdTe infrared detectors, and ferroelectric thin film devices. Prof. Phillips is a member of IEEE (senior member), ASEE, AVS, and MRS, and has received an NSF CAREER award in 2003 and DARPA MTO Young Faculty Award in 2007. He serves as an associate editor for the Journal of Electronic Materials.