Publications

Below is a listing of peer-reviewed journal publications from our group. For a full list that includes conference proceedings and presentations, please see the Phillips Biography.

[1] A. S. Teran, C. Chen, E. Lopez, P. G. Linares, I. Artacho, A. Marti, A. Luque and J. D. Phillips, “Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT-ZnSe Solar Cells”, IEEE J. Photovoltaics 5, 874-877 (2015).

[2] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw and J. Phillips, “AlGaAs Photovoltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes”, IEEE Transactions on Electron Devices 62, 2170-2175 (2015).

[3] J. Foley and J. Phillips, “Normal incidence narrowband transmission filtering capabilities using symmetry protected modes of a dielectric grating”, Optics Letters 40, 2637-2640 (2015).

[4] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips and Y. Wang, “Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy”, Journal of Electronic Materials 43, 889-893 (2014).

[5] S. A. Sis, S. Lee, V. Lee, A. K. Bayraktaroglu, J. D. Phillips and A. Mortazawi, “Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators”, Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on 61, 231-238 (2014).

[6] E. Plis, S. Myers, D. Ramirez, E. P. Smith, D. Rhiger, C. Chen, J. D. Phillips and S. Krishna, “Dual color longwave InAs/GaSb type-II strained layer superlattice detectors”, Infrared Physics & Technology (2014).

[7] J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin and J. Millunchick, “Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells”, Physical Review Applied 1, 051003 (2014).

[8] J. M. Foley, S. M. Young and J. D. Phillips, “Symmetry-protected mode coupling near normal incidence for narrow-band transmission filtering in a dielectric grating”, Physical Review B 89, 165111 (2014).

[9] C. Chen, J. Zheng, K. Nguy, F. Naab and J. Phillips, “Distinguishing Optical Behavior of Oxygen States and Native Deep Level Emission in ZnTe”, Journal of Electronic Materials 43, 879-883 (2014).

[10] E. Antolin, C. Chen, I. Ramiro, J. Foley, E. Lopez, I. Artacho, J. Hwang, A. Teran, E. Hernandez, C. Tablero, A. Marti, J. D. Phillips and A. Luque, “Intermediate Band to Conduction Band Optical Absorption in ZnTeO”, IEEE Journal of Photovoltaics 4, 1091-1094 (2014).

[11] M. J. Abere, C. Chen, D. R. Rittman, M. Kang, R. S. Goldman, J. D. Phillips, B. Torralva and S. M. Yalisove, “Nanodot formation induced by femtosecond laser irradiation”, Applied Physics Letters 105, 163103 (2014).

[12] A. J. Martin, J. Hwang, E. Marquis, E. P. Smakman, T. W. Saucer, G. V. Rodriguez, A. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips and J. Mirecki Millunchick, “The disintigration of GaSb/GaAs nanostructures upon capping”, Applied Physics Letters 102, 113103 (2013).

[13] A. Lin and J. D. Phillips, “Resolving Spectral Overlap Issue of Intermediate Band Solar Cells using Non-uniform Subbandgap State Filling”, Progress in Photovoltaics: Research and Applications DOI: 10.1002/pip.2358, (2013).

[14] V. Lee, S. A. Sis, J. D. Phillips and A. Mortazawi, “Intrinsically Switchable Ferroelectric Contour Mode Resonators”, Microwave Theory and Techniques, IEEE Transactions on 61, 2806-2813 (2013).

[15] J. Foley, S. Young and J. Phillips, “Narrowband Mid-Infrared Transmission Filtering of a Single Layer Dielectric Grating”, Applied Physics Letters 103, 071107 (2013).

[16] H. Chi, C. Chen, J. D. Phillips and C. Uher, “Transport properties of ZnTe:N thin films”, Applied Physics Letters 103, 042108 (2013).

[17] C. Chen, S. J. Kim, X. Pan and J. D. Phillips, “Epitaxial growth of ZnTe on GaSb (100) using in situ ZnCl2 surface clean”, Journal of Vacuum Science & Technology B 31, 03C118 (2013).

[18] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L. MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang and H. Wang, “A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure”, Advanced Materials 25, 1028-1032 (2013).

[19] J. J. Siddiqui, J. D. Phillips, K. Leedy and B. Bayraktaroglu, “Bias-Temperature-Stress Characteristics of ZnO/HfO2 Thin Film Transistors”, IEEE Transactions on Electron Devices 59, 1488-1493 (2012).

[20] J. Siddiqui, J. Phillips, K. Leedy and B. Bayraktaroglu, “Illumination instabilities in ZnO/HfO¬2 thin film transistors and influence of grain boundary charge”, Journal of Materials Research 27, 2199-2204 (2012).

[21] S. J. Kim, B. C. Juang, W. Wang, J. R. Jokisaari, C. Chen, J. D. Phillips and X. Pan, “Evolution of self-assembled Type-II ZnTe/ZnSe nanostructures: Structural and electronic properties”, Journal of Applied Physics 111, 093524 (2012).

[22] A. M. Itsuno, J. D. Phillips and S. Velicu, “Mid-Wave Infrared HgCdTe nBn Photodetector”, Applied Physics Letters 100, 161102 (2012).

[23] A. Itsuno, J. Phillips and S. Velicu, “Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector”, Journal of Electronic Materials 41, 2886-2892 (2012).

[24] J. Hwang, A. J. Martin, J. M. Millunchick and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion”, Journal of Applied Physics 111, 074514 (2012).

[25] J. Foley, A. Itsuno, T. Das, S. Velicu and J. Phillips, “Broadband Long-Wavelength Infrared Si/SiO2 Subwavelength Grating Reflector”, Optics Letters 37, 1523-1525 (2012).

[26] A. Das, J. Heo, A. Bayraktaroglu, J. Phillips, W. Guo, T. K. Ng, B. Ooi and P. Bhattacharya, “Room temperature strong coupling effects in a single ZnO nanowire microcavity”, Optics Express 20, 11830-11837 (2012).

[27] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L. MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang and H. Wang, “A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure”, Advanced Materials DOI: 10.1002/adma.201203051 (2012).

[28] W. Weiming, Y. Jun, Z. Xin and J. Phillips, “Intermediate-band solar cells based on dilute alloys and quantum dots”, Frontiers of Optoelectronics in China 4, 2-11 (2011).

[29] W. Wang, J. D. Phillips, S. J. Kim and X. Pan, “ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells”, Journal of Electronic Materials 40, 1674-1678 (2011).

[30] J. Siddiqui, J. Phillips, B. Bayraktaroglu and K. Leedy, “Electronic properties of interface states in HfO2/ZnO thin films”, IEEE Electron Device Letters 32, 1713-1715 (2011).

[31] A. M. Itsuno, J. D. Phillips and S. Velicu, “Predicted performance improvement of Auger-suppressed HgCdTe photodiodes and p-n heterojunction detectors”, IEEE Transactions on Electron Devices 58, 501-507 (2011).

[32] A. Itsuno, J. D. Phillips and S. Velicu, “Design and modeling of HgCdTe n-B-n detectors”, Journal of Electronic Materials 40, 1624-1629 (2011).

[33] J. Hwang and J. Phillips, “Band Structure of Strain-Balanced GaAsBi/GaAsN Superlattices on GaAs”, Phys. Rev. B 83, 195327 (2011).

[34] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips and P. Wijewarnasuriya, “MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements”, Journal of Electronic Materials 39, 873-881 (2010).

[35] A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein and P. S. Wijewarnasuriya, “Arsenic diffusion study in HgCdTe for low p-type doping in Auger suppressed photodiodes”, Journal of Electronic Materials 39, 945-950 (2010).

[36] X. Zhu, V. Lee, J. Phillips and A. Mortazawi, “An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films”, IEEE Microwave and Wireless Component Letters 19, 359-361 (2009).

[37] W. Wang, A. Lin, J. D. Phillips and W. Metzger, “Generation and recombination rates at ZnTe:O intermediate band states”, Applied Physics Letters 95, 261107 (2009).

[38] W. Wang, A. Lin and J. Phillips, “Intermediate-Band Photovoltaic Solar Cell Based on ZnTe:O”, Applied Physics Letters 95, 011103 (2009).

[39] W. Wang, W. Bowen, S. Lin, S. Spanninga and J. Phillips, “Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy”, Journal of Electronic Materials 38, 119-125 (2009).

[40] A. Lin and J. Phillips, “Drift-Diffusion Model for Intermediate-Band Solar Cell”, IEEE Transactions on Electron Devices 56, 3168-3174 (2009).

[41] A. Lin and J. Phillips, “Model for Intermediate Band Solar Cells Incorporating Carrier Transport and Recombination and Application to ZnTeO”, Journal of Applied Physics 105, 064512 (2009).

[42] P. Y. Emelie, J. D. Phillips, S. Velicu and P. S. Wijewarnasuriya, “Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger supression”, J. Phys. D 42, 234003 (2009).

[43] W. E. Bowen, W. Wang and J. D. Phillips, “Complementary Thin-Film Electronics Based on n-channel ZnO and p-channel ZnTe”, IEEE Electron Device Letters 30, 1314-1316 (2009).

[44] W. Wang, S. Lin and J. Phillips, “Electrical characteristics and photoresponse of ZnO/ZnTe heterojunction diodes”, Journal of Electronic Materials 37, 1044-1048 (2008).

[45] A. Lin and J. Phillips, “Optimization of random diffraction gratings in thin film solar cells using genetic algorithms”, Solar Energy Materials and Solar Cells 92, 1689-1696 (2008).

[46] P. Y. Emelie, S. Velicu, C. H. Grein, J. D. Phillips, P. S. Wijewarnasuriya and N. K. Dhar, “Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes Under Non-Equilibrium Operation”, Journal of Electronic Materials 37, 1362-1368 (2008).

[47] E. Cagin, J. Yang, W. Wang, J. D. Phillips, S. K. Hong, J. W. Lee and J. Y. Lee, “Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy”, Applied Physics Letters 92, 233505 (2008).

[48] W. Bowen, W. Wang, E. Cagin and J. D. Phillips, “Quantum confinement and carrier localization effects in ZnO/MgxZn1-xO Wells”, Journal of Electronic Materials 37, 749-754 (2008).

[49] J. S. Fu, X. A. Zhu, J. D. Phillips and A. Mortazawi, “Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits”, IEEE Trans. Microwave Theory and Techniques 55, 354-360 (2007).

[50] P. Y. Emelie, J. D. Phillips, S. Velicu and C. H. Grein, “Modeling and Design Considerations of HgCdTe Infrared Detectors Under Non-Equilibrium Operation”, J. Electron. Mater. 36, 846-851 (2007).

[51] P. Y. Emelie, J. D. Phillips, C. Fulk, J. Garland and S. Sivananthan, “Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe”, J. Electron. Mater. 36, 841-845 (2007).

[52] E. Cagin, D. Y. Chen, J. J. Siddiqui and J. D. Phillips, “Hysteretic Metal-Ferroelectric-Semiconductor Capacitors Based on PZT/ZnO Heterostructures”, J. Phys. D 40, 2430-2434 (2007).

[53] J. Siddiqui, E. Cagin, D. Chen and J. D. Phillips, “ZnO Thin Film Transistors with Polycrystalline (Ba,Sr)TiO3 Gate Insulators”, Appl. Phys. Lett. 88, 212903 (2006).

[54] T. E. Murphy, K. Moazzami and J. D. Phillips, “Trap related photoconductivity in ZnO epilayers”, Journal of Electronic Materials 35, 543-549 (2006).

[55] K. Moazzami, T. E. Murphy, J. D. Phillips, M. Cheung and A. N. Cartwright, “Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra”, Semicond. Sci. Technol. 21, 717-723 (2006).

[56] P. Y. Emelie, J. D. Phillips, B. Buller and U. D. Venkateswaran, “Free carrier absorption and lattice vibrational modes in bulk ZnO”, Journal of Electronic Materials 35, 525-529 (2006).

[57] D. Chen and J. D. Phillips, “Analysis and design optimization of electrooptic interferometric modulators for microphotonics applications”, IEEE J. Lightwave Technology 24, 2340-2346 (2006).

[58] D. Chen and J. D. Phillips, “Electric field dependence of piezoelectric coefficient in ferroelectric thin films”, J. Electroceramics 17, 613-617 (2006).

[59] T. E. Murphy, D. Y. Chen and J. D. Phillips, “Growth And Electronic Properties Of ZnO Epilayers By Plasma-Assisted Molecular Beam Epitaxy”, J. Electron. Mater. 34, 699-703 (2005).

[60] T. E. Murphy, D. Y. Chen, E. Cagin and J. D. Phillips, “Electronic Properties Of ZnO Epilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy”, J. Vac. Sci. Technol. B 23, 1277-1280 (2005).

[61] T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen and J. D. Phillips, “Properties Of Electrical Contacts On Bulk And Epitaxial n-Type ZnO”, J. Electron. Mater. 34, 389-394 (2005).

[62] K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink and T. Tiwald, “Detailed Study Of Above Bandgap Optical Absorption In MBE HgCdTe”, J. Electron. Mater. 34, 773-778 (2005).

[63] D. Chen and J. D. Phillips, “Extraction of Electro-Optic Coefficient in Thin-Film Linear Electro-Optic Mach-Zehnder Interferometers with Non-Periodic Intensity-Voltage Output Characteristics”, Optical Engineering 44, 034601 (2005).

[64] D. Chen, T. E. Murphy and J. D. Phillips, “Properties Of Ferroelectric Pb(Zr,Ti)O3 Thin Films On ZnO/Al2O3 (0001) Epilayers”, Thin Solid Films 491, 301-304 (2005).

[65] T. E. Murphy, S. Walavalkar and J. D. Phillips, “Epitaxial growth and surface modeling of ZnO on c-plane Al2O3“, Applied Physics Letters 85, 6338-6340 (2004).

[66] T. E. Murphy, D. Chen and J. D. Phillips, “Electronic Properties Of Ferroelectric BaTiO3/MgO Capacitors On GaAs”, Applied Physics Letters 85, 3208-3210 (2004).

[67] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian and J. Arias, “Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector modeling”, phys. Stat. Sol. (c) 1, 662-665 (2004).

[68] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian and J. Arias, “Optical Absorption Model for MBE HgCdTe and Application to Infrared Detector Photo Response”, J. Electron. Mater. 33, 701-708 (2004).

[69] D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, “Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures”, Applied Physics Letters 85, 5206-5208 (2004).

[70] S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning and P. Bhattacharya, “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots”, Journal of Electronic Materials 33, L5-8 (2004).

[71] J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee and J. M. Arias, “Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy”, Applied Physics Letters 83, 3701-3703 (2003).

[72] K. Moazzami, D. Liao, J. D. Phillips, D. L. Lee, M. Carmody, M. Zandian and D. Edwall, “Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition”, J. Electron. Mater. 32, 646-650 (2003).

[73] B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh and P. Bhattacharya, “Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum-Dot Infrared Photodetectors”, IEEE Journal of Quantum Electronics 39, 459-467 (2003).

[74] M. Carmody, D. Lee, M. Zandian, J. Phillips and J. Arias, “Threading and Misfit-Dislocation Motion in Molecular-Beam-Epitaxy-Grown HgCdTe Epilayers”, J. Electron. Mater. 32, 710-716 (2003).

[75] P. S. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. E. Dewames, G. Hildebrandt, J. Bajaj, J. Arias, A. I. D’Souza and F. Moore, “Advances in Large-Area Hg1-xCdxTe Photovoltaic Detectors for Remote-Sensing Applications”, Journal of Electronic Materials 31, 726-31 (2002).

[76] B. Shin, B. Lita, R. S. Goldman, J. D. Phillips and P. Bhattacharya, “Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots”, Applied Physics Letters 81, 1423-25 (2002).

[77] J. D. Phillips, D. D. Edwall and D. L. Lee, “Control Of Very-Long-Wavelength Infrared HgCdTe Detector Cutoff Wavelength”, Journal of Electronic Materials 31, 664-668 (2002).

[78] J. Phillips, “Evaluation of the fundamental properties of quantum dot infrared detectors”, Journal of Applied Physics 91, 4590-4594 (2002).

[79] S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, P. Bhattacharya and S. W. Kennerly, “Features – Hot Dot Detectors – Infrared quantum dot intersubband photodetectors are a promising technology for multiwavelength IR detection”, IEEE circuits and devices 18, 14 (11 pages) (2002).

[80] K. Kim, J. Urayama, T. Norris, J. Singh, J. Phillips and P. Bhattacharya, “Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots”, Applied Physics Letters 81, 670-2 (2002).

[81] J. Phillips, D. Edwall, D. Lee and J. Arias, “Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements”, J. Vac. Sci. Technol. B 19, 1580-4 (2001).

[82] D. Edwall, J. Phillips, D. Lee and J. Arias, “Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry”, Journal of Electronic Materials 30, 643-6 (2001).

[83] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann and K. Namjou, “Carrier-dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors”, Journal of Crystal Growth 227, 27-35 (2001).

[84] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, “Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices”, Surface Review and Letters 7, 539-45 (2000).

[85] R. M. Biefeld, J. D. Phillips and S. R. Kurtz, “InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition”, Journal of Crystal Growth 211, 400-4 (2000).

[86] R. M. Biefeld, J. D. Phillips and S. R. Kurtz, “Exploring new active regions for type I InAsSb strained-layer lasers”, Journal of Electronic Materials 29, 91-3 (2000).

[87] R. M. Biefeld and J. D. Phillips, “Growth of InSb on GaAs using InAlSb buffer layers”, Journal of Crystal Growth 209, 567-71 (2000).

[88] Z. Weidong, O. Qasaimeh, J. Phillips, S. Krishna and P. Bhattacharya, “Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers”, Applied Physics Letters 74, 783-5 (1999).

[89] O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya and M. Dutta, “Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers”, Applied Physics Letters 74, 1654-6 (1999).

[90] J. D. Phillips, P. K. Bhattacharya and U. D. Venkateswaran, “Photoluminescence studies on self-organized InAlAs/AlGaAs quantum dots under pressure”, Physica Status Solidi B 211, 85-9 (1999).

[91] J. Phillips, K. Kamath, P. Bhattacharya and U. Venkateswaran, “Temperature-dependent photoluminescence of In 0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots”, Journal of Applied Physics 85, 2997-9 (1999).

[92] J. Phillips, P. Bhattacharya and U. Venkateswaran, “Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots”, Applied Physics Letters 74, 1549-51 (1999).

[93] J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman and M. Dutta, “Self-assembled InAs-GaAs quantum-dot intersubband detectors”, IEEE Journal of Quantum Electronics 35, 936-43 (1999).

[94] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, “Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots”, Applied Physics Letters 75, 2797-9 (1999).

[95] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, “Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots”, Applied Physics Letters 74, 2824-6 (1999).

[96] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya and J. C. Jiang, “Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates”, Applied Physics Letters 74, 1355-7 (1999).

[97] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna and P. Bhattacharya, “Growth and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon”, J. Vac. Sci. Technol. B 17, 1116-19 (1999).

[98] K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya and J. C. Jiang, “In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates”, Journal of Crystal Growth 201, 1186-9 (1999).

[99] D. Klotzkin, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, “Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements”, J. Vac. Sci. Technol. B 17, 1276-80 (1999).

[100] P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. T. Jiang, N. Chervela, T. B. Norris, T. Sosnowski, J. Laskar and M. R. Murty, “In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties”, IEEE Transactions on Electron Devices 46, 871-83 (1999).

[101] P. Bhattacharya, K. Kamath, J. Phillips and D. Klotzkin, “Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications”, Bulletin of Materials Science 22, 519-29 (1999).

[102] O. Qasaimeh, K. Kamath, P. Bhattacharya and J. Phillips, “Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots”, Applied Physics Letters 72, 1275-7 (1998).

[103] J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, “Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots”, J. Vac. Sci. Technol. B 16, 1343-6 (1998).

[104] J. Phillips, K. Kamath, T. Brock and P. Bhattacharya, “Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors”, Applied Physics Letters 72, 3509-11 (1998).

[105] J. Phillips, K. Kamath and P. Bhattacharya, “Far-infrared photoconductivity in self-organized InAs quantum dots”, Applied Physics Letters 72, 2020-2 (1998).

[106] J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, “Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots”, Applied Physics Letters 71, 2079-81 (1997).

[107] K. Kamath, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, “Small-signal modulation and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers”, Applied Physics Letters 70, 2952-3 (1997).

[108] K. Kamath, P. Bhattacharya and J. Phillips, “Room temperature luminescence from self-organized InxGa1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity”, Journal of Crystal Growth 175, 175-1762 (1997).

[109] J. Phillips, K. Kamath, J. Singh and P. Bhattacharya, “Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: blue shift in luminescence spectra”, Applied Physics Letters 68, 1120-2 (1996).

[110] K. Kamath, J. Phillips, J. Singh and P. Bhattacharya, “Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls”, J. Vac. Sci. Technol. B 14, 2312-14 (1996).

[111] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris and J. Phillips, “Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers”, Electronics Letters 32, 1374-5 (1996).

[112] P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips and P. Bhattacharya, “Conduction band offsets in CdZnSe/ZnSSe single quantum wells measured by deep level transient spectroscopy”, Applied Physics Letters 68, 3591-3593 (1996).