Publications

Below is a listing of peer-reviewed journal publications from our group. For a full list that includes conference proceedings and presentations, please see the Phillips Biography.

[1] A. J. Martin, J. Hwang, E. Marquis, E. P. Smakman, T. W. Saucer, G. V. Rodriguez, A. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips and J. Mirecki Millunchick, “The disintigration of GaSb/GaAs nanostructures upon capping”, Appl. Phys. Lett. 102 113103 (2013).

[2] A. Lin and J. D. Phillips, “Resolving Spectral Overlap Issue of Intermediate Band Solar Cells using Non-uniform Subbandgap State Filling”, Progress in Photovoltaics: Research and Applications DOI: 10.1002/pip.2358 (2013).

[3] V. Lee, S. Sis, J. Phillips and A. Mortazawi, “Intrinsically Switchable Ferroelectric Contour Mode Resonators”, IEEE Trans. Microwave Theory and Techniques (2013). DOI: 10.1109/TMTT.2013.2271756

[4] H. Chi, C. Chen, J. D. Phillips and C. Uher, “Transport properties of ZnTe:N thin films”, Appl. Phys. Lett. 103 042108 (2013). DOI: 10.1063/1.4816815

[5] C. Chen, S. J. Kim, X. Pan and J. D. Phillips, “Epitaxial growth of ZnTe on GaSb (100) using in situ ZnCl2 surface clean”, Journal of Vacuum Science & Technology B 31 (3), 03C118 (2013).

[6] J. J. Siddiqui, J. D. Phillips, K. Leedy and B. Bayraktaroglu, “Bias-Temperature-Stress Characteristics of ZnO/HfO2 Thin Film Transistors”, IEEE Trans. Electron Dev. 59 (5), 1488-1493 (2012).

[7] J. Siddiqui, J. Phillips, K. Leedy and B. Bayraktaroglu, “Illumination instabilities in ZnO/HfO¬2 thin film transistors and influence of grain boundary charge”, Journal of Materials Research 27 2199-2204 (2012).

[8] S. J. Kim, B. C. Juang, W. Wang, J. R. Jokisaari, C. Chen, J. D. Phillips and X. Pan, “Evolution of self-assembled Type-II ZnTe/ZnSe nanostructures: Structural and electronic properties”, J. Appl. Phys. 111 (9), 093524 (2012).

[9] A. M. Itsuno, J. D. Phillips and S. Velicu, “Mid-Wave Infrared HgCdTe nBn Photodetector”, Appl. Phys. Lett. 100 (17), 161102 (2012).

[10] A. Itsuno, J. Phillips and S. Velicu, “Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector”, J. Electron. Mater. 41 (10), 2886-2892 (2012). 10.1007/s11664-012-1992-y

[11] J. Hwang, A. J. Martin, J. M. Millunchick and J. D. Phillips, “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion”, J. Appl. Phys. 111 (8), 074514 (2012).

[12] J. Foley, A. Itsuno, T. Das, S. Velicu and J. Phillips, “Broadband Long-Wavelength Infrared Si/SiO2 Subwavelength Grating Reflector”, Optics Letters 37 (9), 1523-1525 (2012).

[13] A. Das, J. Heo, A. Bayraktaroglu, J. Phillips, W. Guo, T. K. Ng, B. Ooi and P. Bhattacharya, “Room temperature strong coupling effects in a single ZnO nanowire microcavity”, Optics Express 20 (11), 11830-11837 (2012).

[14] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L. MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang and H. Wang, “A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure”, Advanced Materials DOI: 10.1002/adma.201203051 (2012). 10.1002/adma.201203051

[15] W. Weiming, Y. Jun, Z. Xin and J. Phillips, “Intermediate-band solar cells based on dilute alloys and quantum dots”, Frontiers of Optoelectronics in China 4 (Copyright 2011, The Institution of Engineering and Technology), 2-11 (2011).

[16] W. Wang, J. D. Phillips, S. J. Kim and X. Pan, “ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells”, J. Electron. Mater. 40 (8), 1674-1678 (2011).

[17] J. Siddiqui, J. Phillips, B. Bayraktaroglu and K. Leedy, “Electronic properties of interface states in HfO2/ZnO thin films”, IEEE Electron Device Letters 32 (12), 1713-1715 (2011).

[18] A. M. Itsuno, J. D. Phillips and S. Velicu, “Predicted performance improvement of Auger-suppressed HgCdTe photodiodes and p-n heterojunction detectors”, IEEE Trans. Electron Dev. 58 (2), 501-507 (2011).

[19] A. Itsuno, J. D. Phillips and S. Velicu, “Design and modeling of HgCdTe n-B-n detectors”, J. Electron. Mater. 40 (8), 1624-1629 (2011).

[20] J. Hwang and J. Phillips, “Band Structure of Strain-Balanced GaAsBi/GaAsN Superlattices on GaAs”, Phys. Rev. B 83 (19), 195327 (2011).

[21] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips and P. Wijewarnasuriya, “MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements”, J. Electron. Mater. 39 (7), 873-881 (2010).

[22] A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein and P. S. Wijewarnasuriya, “Arsenic diffusion study in HgCdTe for low p-type doping in Auger suppressed photodiodes”, J. Electron. Mater. 39 (7), 945-950 (2010).

[23] X. Zhu, V. Lee, J. Phillips and A. Mortazawi, “An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films”, IEEE Microwave and Wireless Component Letters 19 (6), 359-361 (2009).

[24] W. Wang, A. Lin, J. D. Phillips and W. Metzger, “Generation and recombination rates at ZnTe:O intermediate band states”, Appl. Phys. Lett. 95 261107 (2009).

[25] W. Wang, A. Lin and J. Phillips, “Intermediate-Band Photovoltaic Solar Cell Based on ZnTe:O”, Appl. Phys. Lett. 95 011103 (2009).

[26] W. Wang, W. Bowen, S. Lin, S. Spanninga and J. Phillips, “Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy”, J. Electron. Mater. 38 (1), 119-125 (2009).

[27] A. Lin and J. Phillips, “Drift-Diffusion Model for Intermediate-Band Solar Cell”, IEEE Trans. Electron Dev. 56 (12), 3168-3174 (2009).

[28] A. Lin and J. Phillips, “Model for Intermediate Band Solar Cells Incorporating Carrier Transport and Recombination and Application to ZnTeO”, J. Appl. Phys. 105 064512 (2009).

[29] P. Y. Emelie, J. D. Phillips, S. Velicu and P. S. Wijewarnasuriya, “Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger supression”, J. Phys. D 42 234003 (2009).

[30] W. E. Bowen, W. Wang and J. D. Phillips, “Complementary Thin-Film Electronics Based on n-channel ZnO and p-channel ZnTe”, IEEE Electron Device Letters 30 (12), 1314-1316 (2009).

[31] W. Wang, S. Lin and J. Phillips, “Electrical characteristics and photoresponse of ZnO/ZnTe heterojunction diodes”, J. Electron. Mater. 37 (8), 1044-1048 (2008).

[32] A. Lin and J. Phillips, “Optimization of random diffraction gratings in thin film solar cells using genetic algorithms”, Solar Energy Materials and Solar Cells 92 1689-1696 (2008).

[33] P. Y. Emelie, S. Velicu, C. H. Grein, J. D. Phillips, P. S. Wijewarnasuriya and N. K. Dhar, “Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes Under Non-Equilibrium Operation”, J. Electron. Mater. 37 (9), 1362-1368 (2008).

[34] E. Cagin, J. Yang, W. Wang, J. D. Phillips, S. K. Hong, J. W. Lee and J. Y. Lee, “Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy”, Appl. Phys. Lett. 92 233505 (2008).

[35] W. Bowen, W. Wang, E. Cagin and J. D. Phillips, “Quantum confinement and carrier localization effects in ZnO/MgxZn1-xO Wells”, J. Electron. Mater. 37 (5), 749-754 (2008).

[36] J. S. Fu, X. A. Zhu, J. D. Phillips and A. Mortazawi, “Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits”, IEEE Trans. Microwave Theory and Techniques 55 (2), 354-360 (2007).

[37] P. Y. Emelie, J. D. Phillips, S. Velicu and C. H. Grein, “Modeling and Design Considerations of HgCdTe Infrared Detectors Under Non-Equilibrium Operation”, J. Electron. Mater. 36 (8), 846-851 (2007).

[38] P. Y. Emelie, J. D. Phillips, C. Fulk, J. Garland and S. Sivananthan, “Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe”, J. Electron. Mater. 36 (8), 841-845 (2007).

[39] E. Cagin, D. Y. Chen, J. J. Siddiqui and J. D. Phillips, “Hysteretic Metal-Ferroelectric-Semiconductor Capacitors Based on PZT/ZnO Heterostructures”, J. Phys. D 40 2430-2434 (2007).

[40] J. Siddiqui, E. Cagin, D. Chen and J. D. Phillips, “ZnO Thin Film Transistors with Polycrystalline (Ba,Sr)TiO3 Gate Insulators”, Appl. Phys. Lett. 88 212903 (2006).

[41] T. E. Murphy, K. Moazzami and J. D. Phillips, “Trap related photoconductivity in ZnO epilayers”, J. Electron. Mater. 35 (4), 543-549 (2006).

[42] K. Moazzami, T. E. Murphy, J. D. Phillips, M. Cheung and A. N. Cartwright, “Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra”, Semicond. Sci. Technol. 21 717-723 (2006).

[43] P. Y. Emelie, J. D. Phillips, B. Buller and U. D. Venkateswaran, “Free carrier absorption and lattice vibrational modes in bulk ZnO”, J. Electron. Mater. 35 (4), 525-529 (2006).

[44] D. Chen and J. D. Phillips, “Analysis and design optimization of electrooptic interferometric modulators for microphotonics applications”, IEEE J. Lightwave Technology 24 (6), 2340-2346 (2006).

[45] D. Chen and J. D. Phillips, “Electric field dependence of piezoelectric coefficient in ferroelectric thin films”, J. Electroceramics 17 613-617 (2006).

[46] T. E. Murphy, D. Y. Chen and J. D. Phillips, “Growth And Electronic Properties Of ZnO Epilayers By Plasma-Assisted Molecular Beam Epitaxy”, J. Electron. Mater. 34 (6), 699-703 (2005).

[47] T. E. Murphy, D. Y. Chen, E. Cagin and J. D. Phillips, “Electronic Properties Of ZnO Epilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy”, J. Vac. Sci. Technol. B 23 (3), 1277-1280 (2005).

[48] T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen and J. D. Phillips, “Properties Of Electrical Contacts On Bulk And Epitaxial n-Type ZnO”, J. Electron. Mater. 34 (4), 389-394 (2005).

[49] K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink and T. Tiwald, “Detailed Study Of Above Bandgap Optical Absorption In MBE HgCdTe”, J. Electron. Mater. 34 (6), 773-778 (2005).

[50] D. Chen and J. D. Phillips, “Extraction of Electro-Optic Coefficient in Thin-Film  Linear Electro-Optic Mach-Zehnder Interferometers with Non-Periodic Intensity-Voltage Output Characteristics”, Optical Engineering 44 (3), 034601 (2005).

[51] D. Chen, T. E. Murphy and J. D. Phillips, “Properties Of Ferroelectric Pb(Zr,Ti)O3 Thin Films On ZnO/Al2O3 (0001) Epilayers”, Thin Solid Films 491 301-304 (2005).

[52] T. E. Murphy, S. Walavalkar and J. D. Phillips, “Epitaxial growth and surface modeling of ZnO on c-plane Al2O3“, Appl. Phys. Lett. 85 (26), 6338-6340 (2004).

[53] T. E. Murphy, D. Chen and J. D. Phillips, “Electronic Properties Of Ferroelectric BaTiO3/MgO Capacitors On GaAs”, Appl. Phys. Lett. 85 (15), 3208-3210 (2004).

[54] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian and J. Arias, “Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector modeling”, phys. Stat. Sol. (c) 1 (4), 662-665 (2004).

[55] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian and J. Arias, “Optical Absorption Model for MBE HgCdTe and Application to Infrared Detector Photo Response”, J. Electron. Mater. 33 (6), 701-708 (2004).

[56] D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, “Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures”, Appl. Phys. Lett. 85 (22), 5206-5208 (2004).

[57] S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning and P. Bhattacharya, “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots”, J. Electron. Mater. 33 (4), L5-8 (2004).

[58] J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee and J. M. Arias, “Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy”, Appl. Phys. Lett. 83 (18), 3701-3703 (2003).

[59] K. Moazzami, D. Liao, J. D. Phillips, D. L. Lee, M. Carmody, M. Zandian and D. Edwall, “Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition”, J. Electron. Mater. 32 (7), 646-650 (2003).

[60] B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh and P. Bhattacharya, “Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum-Dot Infrared Photodetectors”, IEEE J. Quant. Electron. 39 (3), 459-467 (2003).

[61] M. Carmody, D. Lee, M. Zandian, J. Phillips and J. Arias, “Threading and Misfit-Dislocation Motion in Molecular-Beam-Epitaxy-Grown HgCdTe Epilayers”, J. Electron. Mater. 32 (7), 710-716 (2003).

[62] P. S. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. E. Dewames, G. Hildebrandt, J. Bajaj, J. Arias, A. I. D’Souza and F. Moore, “Advances in Large-Area Hg1-xCdxTe Photovoltaic Detectors for Remote-Sensing Applications”, J. Electron. Mater. 31 (7), 726-31 (2002).

[63] B. Shin, B. Lita, R. S. Goldman, J. D. Phillips and P. Bhattacharya, “Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots”, Appl. Phys. Lett. 81 1423-25 (2002).

[64] J. D. Phillips, D. D. Edwall and D. L. Lee, “Control Of Very-Long-Wavelength Infrared HgCdTe Detector Cutoff Wavelength”, J. Electron. Mater. 31 (7), 664-668 (2002).

[65] J. Phillips, “Evaluation of the fundamental properties of quantum dot infrared detectors”, J. Appl. Phys. 91 (7), 4590-4594 (2002).

[66] S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, P. Bhattacharya and S. W. Kennerly, “Features – Hot Dot Detectors – Infrared quantum dot intersubband photodetectors are a promising technology for multiwavelength IR detection”, IEEE circuits and devices 18 (1), 14 (11 pages) (2002).

[67] K. Kim, J. Urayama, T. Norris, J. Singh, J. Phillips and P. Bhattacharya, “Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots”, Appl. Phys. Lett. 81 670-2 (2002).

[68] J. Phillips, D. Edwall, D. Lee and J. Arias, “Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements”, J. Vac. Sci. Technol. B 19 (4), 1580-4 (2001).

[69] D. Edwall, J. Phillips, D. Lee and J. Arias, “Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry”, J. Electron. Mater. 30 (6), 643-6 (2001).

[70] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann and K. Namjou, “Carrier-dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors”, J. Cryst. Growth 227 (228), 27-35 (2001).

[71] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, “Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices”, Surf. Rev. Lett. 7 (5-6), 539-45 (2000).

[72] R. M. Biefeld, J. D. Phillips and S. R. Kurtz, “InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition”, J. Cryst. Growth 211 (1-4), 400-4 (2000).

[73] R. M. Biefeld, J. D. Phillips and S. R. Kurtz, “Exploring new active regions for type I InAsSb strained-layer lasers”, J. Electron. Mater. 29 (1), 91-3 (2000).

[74] R. M. Biefeld and J. D. Phillips, “Growth of InSb on GaAs using InAlSb buffer layers”, J. Cryst. Growth 209 (4), 567-71 (2000).

[75] Z. Weidong, O. Qasaimeh, J. Phillips, S. Krishna and P. Bhattacharya, “Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers”, Appl. Phys. Lett. 74 (6), 783-5 (1999).

[76] O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya and M. Dutta, “Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers”, Appl. Phys. Lett. 74 (12), 1654-6 (1999).

[77] J. D. Phillips, P. K. Bhattacharya and U. D. Venkateswaran, “Photoluminescence studies on self-organized InAlAs/AlGaAs quantum dots under pressure”, Phys. Stat. Sol. B 211 (1), 85-9 (1999).

[78] J. Phillips, K. Kamath, P. Bhattacharya and U. Venkateswaran, “Temperature-dependent photoluminescence of In 0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots”, J. Appl. Phys. 85 (5), 2997-9 (1999).

[79] J. Phillips, P. Bhattacharya and U. Venkateswaran, “Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots”, Appl. Phys. Lett. 74 (11), 1549-51 (1999).

[80] J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman and M. Dutta, “Self-assembled InAs-GaAs quantum-dot intersubband detectors”, IEEE J. Quant. Electron. 35 (6), 936-43 (1999).

[81] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, “Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots”, Appl. Phys. Lett. 75 (18), 2797-9 (1999).

[82] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, “Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots”, Appl. Phys. Lett. 74 (19), 2824-6 (1999).

[83] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya and J. C. Jiang, “Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates”, Appl. Phys. Lett. 74 (10), 1355-7 (1999).

[84] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna and P. Bhattacharya, “Growth and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon”, J. Vac. Sci. Technol. B 17 (3), 1116-19 (1999).

[85] K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya and J. C. Jiang, “In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates”, J. Cryst. Growth 201 (202), 1186-9 (1999).

[86] D. Klotzkin, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, “Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements”, J. Vac. Sci. Technol. B 17 (3), 1276-80 (1999).

[87] P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. T. Jiang, N. Chervela, T. B. Norris, T. Sosnowski, J. Laskar and M. R. Murty, “In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties”, IEEE Trans. Electron Dev. 46 (5), 871-83 (1999).

[88] P. Bhattacharya, K. Kamath, J. Phillips and D. Klotzkin, “Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications”, Bulletin Mat. Sci. 22 (3), 519-29 (1999).

[89] O. Qasaimeh, K. Kamath, P. Bhattacharya and J. Phillips, “Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots”, Appl. Phys. Lett. 72 (11), 1275-7 (1998).

[90] J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, “Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots”, J. Vac. Sci. Technol. B 16 (3), 1343-6 (1998).

[91] J. Phillips, K. Kamath, T. Brock and P. Bhattacharya, “Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors”, Appl. Phys. Lett. 72 (26), 3509-11 (1998).

[92] J. Phillips, K. Kamath and P. Bhattacharya, “Far-infrared photoconductivity in self-organized InAs quantum dots”, Appl. Phys. Lett. 72 (16), 2020-2 (1998).

[93] J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, “Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots”, Appl. Phys. Lett. 71 (15), 2079-81 (1997).

[94] K. Kamath, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, “Small-signal modulation and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers”, Appl. Phys. Lett. 70 (22), 2952-3 (1997).

[95] K. Kamath, P. Bhattacharya and J. Phillips, “Room temperature luminescence from self-organized InxGa1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity”, J. Cryst. Growth 175 175-1762 (1997).

[96] J. Phillips, K. Kamath, J. Singh and P. Bhattacharya, “Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: blue shift in luminescence spectra”, Appl. Phys. Lett. 68 (8), 1120-2 (1996).

[97] K. Kamath, J. Phillips, J. Singh and P. Bhattacharya, “Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls”, J. Vac. Sci. Technol. B 14 (3), 2312-14 (1996).

[98] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris and J. Phillips, “Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers”, Electron. Lett. 32 (15), 1374-5 (1996).

[99] P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips and P. Bhattacharya, “Conduction band offsets in CdZnSe/ZnSSe single quantum wells measured by deep level transient spectroscopy”, Appl. Phys. Lett. 68 (25), 3591-3593 (1996).